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Item #:
84188459
10pcs IRF640N "IR" Power MOSFET N-Channel 18A 200V Transistor to-220 IRF640
Item #:
84188459
BDT 2916
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Order now and get it around Wednesday, July 22
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10pcs IRF640N IR Power MOSFET N-Channel 18A 200V Transistor to-220
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Note: Step Down Voltage Transformer required for using electronics products of US store (110-120). Recommended power converters Buy Now.
What Stands Out
High Current Rating
The IRF640N supports up to 18A, making it ideal for high-power applications and ensuring stable performance under heavy loads.
Superior Voltage Handling
With a maximum voltage of 200V, this MOSFET offers robust reliability for demanding electronic circuits, preventing breakdown even under extreme conditions.
TO-220 Package
The TO-220 housing enhances heat dissipation, allowing for efficient cooling and longevity, which is perfect for various electronic projects.
Product Details
| Brand | International Rectifier |
| Mounting Style | Through-Hole |
| Function | Power Transistor |
| Series | IRF640 |
| Type | N-Channel Enhancement Mode MOSFET |
| Model | MOSFET |
| Packaging | Bag |
| Number of Pins | 3 |
| Package/Case | TO-220 |
| MPN | IRF640N |
| Transistor Category | Power Transistor |
| Country of Origin | China |
| UPC | Does not apply |
| Item Weight | 1 lbs (450 grams) |
Who Should Buy?
-
Hobbyist Electronics
Ideal for DIY projects requiring efficient switching and high power applications in hobbyist electronics.
-
Power Supply Designers
Beneficial for designing power supplies needing reliable performance at high voltage levels up to 200V.
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Motor Control Applications
Great choice for projects involving motor control, capable of handling high current demands effectively.
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High-Frequency Applications
Not suitable for applications requiring fast switching speeds due to slower switching times.
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Low-Power Circuits
Oversized for low-power circuits where smaller, more efficient transistors would suffice.
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Temperature Sensitive Systems
May not operate reliably in extremely high-temperature environments without proper heat dissipation solutions.
Product Description
Have any Query? Chat with us
Customer Questions & Answers
-
Question:
What is the maximum Drain-Source Voltage for this transistor?
Answer: The maximum Drain-Source Voltage is 200 V. -
Question:
Is the package RoHS compliant?
Answer: Yes, the package is RoHS compliant. -
Question:
What is the maximum Drain Current for this transistor?
Answer: The maximum Drain Current is 18 A.
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“The product received very good packaging & safe…Thank You”
16 June 2026 · via Trustpilot
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12 June 2026 · via Trustpilot
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BDT 2916
Order now and get it around Wednesday, July 22
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Features & Benefits
- MOSFET
- N-Channel
- Maximum Power Dissipation: 150 W
- Maximum Drain-Source Voltage: 200 V
- Maximum Gate-Threshold Voltage: 4 V
- Package Included: 10pcs IRF640N IR Power MOSFET N-Channel 18A 200V Transistor to-220
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